BC857CW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC857CW-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC857CW
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.084080
$0.08408
500
$0.061824
$30.912
1000
$0.051520
$51.52
2000
$0.047266
$94.532
5000
$0.044174
$220.87
10000
$0.041092
$410.92
15000
$0.039740
$596.1
50000
$0.039076
$1953.8
BC857CW-7-F Product Details
BC857CW-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 200MHz is present in the part.Input voltage breakdown is available at 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857CW-7-F Features
the DC current gain for this device is 420 @ 2mA 5V a collector emitter saturation voltage of -650mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 200MHz
BC857CW-7-F Applications
There are a lot of Diodes Incorporated BC857CW-7-F applications of single BJT transistors.