BC856AW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC856AW-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC856AW
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
650mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
125
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC856AW-7-F Product Details
BC856AW-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.A collector emitter saturation voltage of 650mV ensures maximum design flexibility.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.200MHz is present in the transition frequency.As a result, it can handle voltages as low as 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC856AW-7-F Features
the DC current gain for this device is 125 @ 2mA 5V a collector emitter saturation voltage of 650mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
BC856AW-7-F Applications
There are a lot of Diodes Incorporated BC856AW-7-F applications of single BJT transistors.