BF821,235 Overview

DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.When VCE saturation is 800mV @ 5mA, 30mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 300V volts.A maximum collector current of 50mA volts can be achieved.

BF821,235 Features

the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 800mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz

BF821,235 Applications

There are a lot of Nexperia USA Inc. BF821,235 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting