BCP52TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BCP52TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCP52
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
125MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Height
1.65mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.741405
$3.741405
10
$3.529628
$35.29628
100
$3.329837
$332.9837
500
$3.141356
$1570.678
1000
$2.963543
$2963.543
BCP52TA Product Details
BCP52TA Overview
DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 150MHz in the part.Input voltage breakdown is available at 60V volts.The maximum collector current is 1A volts.
BCP52TA Features
the DC current gain for this device is 40 @ 150mA 2V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 150MHz
BCP52TA Applications
There are a lot of Diodes Incorporated BCP52TA applications of single BJT transistors.