BCP5310TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.A transition frequency of 150MHz is present in the part.The breakdown input voltage is 80V volts.When collector current reaches its maximum, it can reach 1A volts.

BCP5310TA Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCP5310TA Applications

There are a lot of Diodes Incorporated BCP5310TA applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface