ZXTP2012ASTZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.With a collector emitter saturation voltage of -210mV, it offers maximum design flexibility.When VCE saturation is 210mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 120MHz.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3.5A volts at Single BJT transistors maximum.
ZXTP2012ASTZ Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTP2012ASTZ Applications
There are a lot of Diodes Incorporated ZXTP2012ASTZ applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
