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BCP54TA

BCP54TA

BCP54TA

Diodes Incorporated

BCP54TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BCP54TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCP54
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
Height 1.65mm
Length 6.55mm
Width 3.55mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.077013 $0.077013
500 $0.056627 $28.3135
1000 $0.047189 $47.189
2000 $0.043293 $86.586
5000 $0.040461 $202.305
10000 $0.037637 $376.37
15000 $0.036400 $546
50000 $0.035792 $1789.6
BCP54TA Product Details

BCP54TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCP54TA Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 150MHz

BCP54TA Applications


There are a lot of Diodes Incorporated BCP54TA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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