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BC546BTF

BC546BTF

BC546BTF

ON Semiconductor

BC546BTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC546BTF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Subcategory Other Transistors
Voltage - Rated DC 65V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC546
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
Height 4.58mm
Length 4.58mm
Width 3.86mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.143160 $0.14316
10 $0.135057 $1.35057
100 $0.127412 $12.7412
500 $0.120200 $60.1
1000 $0.113396 $113.396
BC546BTF Product Details

BC546BTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 300MHz.As a result, it can handle voltages as low as 65V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC546BTF Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC546BTF Applications


There are a lot of ON Semiconductor BC546BTF applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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