MJF45H11G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 41A.40MHz is present in the transition frequency.A breakdown input voltage of 80V volts can be used.In extreme cases, the collector current can be as low as 10A volts.
MJF45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 41A
a transition frequency of 40MHz
MJF45H11G Applications
There are a lot of ON Semiconductor MJF45H11G applications of single BJT transistors.
- Inverter
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- Muting
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- Interface
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- Driver
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