BCP5516TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

BCP5516TA Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCP5516TA Applications

There are a lot of Diodes Incorporated BCP5516TA applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver