Welcome to Hotenda.com Online Store!

logo
userjoin
Home

ZXTP4003ZTA

  • ZXTP4003ZTA
  • ZXTP4003ZTA

ZXTP4003ZTA

ZXTP4003ZTA

Diodes Incorporated

ZXTP4003ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP4003ZTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP4003
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 200mV
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 100V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.291600 $0.2916
10 $0.275094 $2.75094
100 $0.259523 $25.9523
500 $0.244833 $122.4165
1000 $0.230975 $230.975
ZXTP4003ZTA Product Details

ZXTP4003ZTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 200mV DC current gain.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Single BJT transistor can be broken down at a voltage of 100V volts.Collector current can be as low as 1A volts at its maximum.

ZXTP4003ZTA Features


the DC current gain for this device is 100 @ 150mA 200mV
the emitter base voltage is kept at 7V

ZXTP4003ZTA Applications


There are a lot of Diodes Incorporated ZXTP4003ZTA applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

Related Part Number

BUL416T
STMicroelectronics
BUL416T
$0 $/piece
2SA1162YT1
ON Semiconductor
2SA1162YT1
$0 $/piece
ZTX948STZ
Diodes Incorporated
ZTX948STZ
$0 $/piece
2N2904
Microsemi Corporation
2N2904
$0 $/piece
BC858BWT1G
ON Semiconductor
BC858BWT1G
$0 $/piece
MJ11016G
ON Semiconductor
MJ11016G
$0 $/piece
2SC3646S-P-TD-E
ON Semiconductor
2SC3646S-P-TD-E
$0 $/piece
BC558C
Rochester Electronics, LLC
BC558C
$0 $/piece
ZTX658
Diodes Incorporated
ZTX658
$0 $/piece
2N4126
Central Semiconductor
2N4126
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News