2SC4117-BL,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC4117-BL,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Power - Max
100mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Max Breakdown Voltage
120V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.129259
$0.129259
10
$0.121942
$1.21942
100
$0.115040
$11.504
500
$0.108528
$54.264
1000
$0.102385
$102.385
2SC4117-BL,LF Product Details
2SC4117-BL,LF Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.An input voltage of 120V volts is the breakdown voltage.A maximum collector current of 100mA volts can be achieved.
2SC4117-BL,LF Features
the DC current gain for this device is 200 @ 2mA 6V the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at 5V
2SC4117-BL,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC4117-BL,LF applications of single BJT transistors.