BCX5616QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BCX5616QTA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Frequency
150MHz
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
150MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
25pF
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.12540
$0.1254
2,000
$0.11595
$0.2319
5,000
$0.10965
$0.54825
10,000
$0.10335
$1.0335
25,000
$0.09600
$2.4
BCX5616QTA Product Details
BCX5616QTA Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The breakdown input voltage is 80V volts.A maximum collector current of 1A volts can be achieved.
BCX5616QTA Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 150MHz
BCX5616QTA Applications
There are a lot of Diodes Incorporated BCX5616QTA applications of single BJT transistors.