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BCX5616QTA

BCX5616QTA

BCX5616QTA

Diodes Incorporated

BCX5616QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BCX5616QTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Position SINGLE
Terminal Form FLAT
Frequency 150MHz
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Collector-Base Capacitance-Max 25pF
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.12540 $0.1254
2,000 $0.11595 $0.2319
5,000 $0.10965 $0.54825
10,000 $0.10335 $1.0335
25,000 $0.09600 $2.4
BCX5616QTA Product Details

BCX5616QTA Overview


In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The breakdown input voltage is 80V volts.A maximum collector current of 1A volts can be achieved.

BCX5616QTA Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCX5616QTA Applications


There are a lot of Diodes Incorporated BCX5616QTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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