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BC857BFA-7B

BC857BFA-7B

BC857BFA-7B

Diodes Incorporated

BC857BFA-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC857BFA-7B Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 435mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 435mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 340MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 45V
Frequency - Transition 340MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Height 350μm
Length 650μm
Width 850μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.910158 $0.910158
10 $0.858640 $8.5864
100 $0.810038 $81.0038
500 $0.764187 $382.0935
1000 $0.720931 $720.931
BC857BFA-7B Product Details

BC857BFA-7B Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In the part, the transition frequency is 340MHz.This device can take an input voltage of 45V volts before it breaks down.Maximum collector currents can be below 100mA volts.

BC857BFA-7B Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 340MHz

BC857BFA-7B Applications


There are a lot of Diodes Incorporated BC857BFA-7B applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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