BC857BFA-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC857BFA-7B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
435mW
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
435mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
340MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
45V
Frequency - Transition
340MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Height
350μm
Length
650μm
Width
850μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.910158
$0.910158
10
$0.858640
$8.5864
100
$0.810038
$81.0038
500
$0.764187
$382.0935
1000
$0.720931
$720.931
BC857BFA-7B Product Details
BC857BFA-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In the part, the transition frequency is 340MHz.This device can take an input voltage of 45V volts before it breaks down.Maximum collector currents can be below 100mA volts.
BC857BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 340MHz
BC857BFA-7B Applications
There are a lot of Diodes Incorporated BC857BFA-7B applications of single BJT transistors.