ZTX751 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX751 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
E-Line
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX751
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
-280mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
DC Current Gain-Min (hFE)
40
Continuous Collector Current
-2A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.96000
$0.96
10
$0.84300
$8.43
100
$0.65700
$65.7
500
$0.52900
$264.5
1,000
$0.43240
$0.4324
ZTX751 Product Details
ZTX751 Overview
The collector emitter saturation voltage is -280mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.A maximum collector current of 2A volts is possible.
ZTX751 Features
a collector emitter saturation voltage of -280mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -2A a transition frequency of 140MHz
ZTX751 Applications
There are a lot of Diodes Incorporated ZTX751 applications of single BJT transistors.