BSS138-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
BSS138-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.5Ohm
Additional Feature
HIGH RELIABILITY, LOW THRESHOLD
Subcategory
FET General Purpose Powers
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Voltage
50V
Power Dissipation-Max
300mW Ta
Element Configuration
Single
Current
2A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
50V
Nominal Vgs
1.2 V
Feedback Cap-Max (Crss)
8 pF
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.23000
$0.23
500
$0.2277
$113.85
1000
$0.2254
$225.4
1500
$0.2231
$334.65
2000
$0.2208
$441.6
2500
$0.2185
$546.25
BSS138-7-F Product Details
BSS138-7-F Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=50V, and this device has a drain-to-source breakdown voltage of 50V voltage.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.2V.Using drive voltage (10V) reduces this device's overall power consumption.
BSS138-7-F Features
a continuous drain current (ID) of 200mA a drain-to-source breakdown voltage of 50V voltage the turn-off delay time is 20 ns a threshold voltage of 1.2V
BSS138-7-F Applications
There are a lot of Diodes Incorporated BSS138-7-F applications of single MOSFETs transistors.