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BSS138-7-F

BSS138-7-F

BSS138-7-F

Diodes Incorporated

BSS138-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

BSS138-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Voltage 50V
Power Dissipation-Max 300mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 50V
Nominal Vgs 1.2 V
Feedback Cap-Max (Crss) 8 pF
Height 1mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.23000 $0.23
500 $0.2277 $113.85
1000 $0.2254 $225.4
1500 $0.2231 $334.65
2000 $0.2208 $441.6
2500 $0.2185 $546.25
BSS138-7-F Product Details

BSS138-7-F Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=50V, and this device has a drain-to-source breakdown voltage of 50V voltage.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.2V.Using drive voltage (10V) reduces this device's overall power consumption.

BSS138-7-F Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V

BSS138-7-F Applications


There are a lot of Diodes Incorporated BSS138-7-F applications of single MOSFETs transistors.

  • Motor Drives and Uninterruptible Power Supples
  • Uninterruptible Power Supply
  • Consumer Appliances
  • Industrial Power Supplies
  • DC-to-DC converters
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • LCD/LED TV
  • Motor drives and Uninterruptible Power Supplies
  • DC/DC converters

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