FQI4N80TU

new-10%

Manufacturer part number:FQI4N80TU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 3.9A I2PAK

Case Package:SOT-23

Datasheet:FQI4N80TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.6Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	3.9A
Number of Elements	1
Power Dissipation-Max	3.13W Ta 130W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.9A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.9A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	460 mJ
Height	9.2mm
Length	9.9mm
Width	4.5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free