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FQI4N80TU

FQI4N80TU

FQI4N80TU

ON Semiconductor

MOSFET N-CH 800V 3.9A I2PAK

SOT-23

FQI4N80TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.6Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 3.9A
Number of Elements 1
Power Dissipation-Max 3.13W Ta 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6 Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.9A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 460 mJ
Height 9.2mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.781488 $5.781488
10 $5.454234 $54.54234
100 $5.145504 $514.5504
500 $4.854249 $2427.1245
1000 $4.579480 $4579.48

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