DCP68-25-13 Overview
This device has a DC current gain of 160 @ 500mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.330MHz is present in the transition frequency.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
DCP68-25-13 Features
the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz
DCP68-25-13 Applications
There are a lot of Diodes Incorporated DCP68-25-13 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
