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DCP68-25-13

DCP68-25-13

DCP68-25-13

Diodes Incorporated

DCP68-25-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCP68-25-13 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 330MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCP68
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 330MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 330MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.291360 $6.29136
10 $5.935245 $59.35245
100 $5.599288 $559.9288
500 $5.282347 $2641.1735
1000 $4.983346 $4983.346
DCP68-25-13 Product Details

DCP68-25-13 Overview


This device has a DC current gain of 160 @ 500mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.330MHz is present in the transition frequency.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

DCP68-25-13 Features


the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 330MHz

DCP68-25-13 Applications


There are a lot of Diodes Incorporated DCP68-25-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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