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DCX53-13

DCX53-13

DCX53-13

Diodes Incorporated

DCX53-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DCX53-13 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DCX53
Pin Count 4
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 200MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 63
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.778000 $5.778
10 $5.450943 $54.50943
100 $5.142399 $514.2399
500 $4.851320 $2425.66
1000 $4.576717 $4576.717
DCX53-13 Product Details

DCX53-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Breakdown input voltage is 80V volts.During maximum operation, collector current can be as low as 1A volts.

DCX53-13 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCX53-13 Applications


There are a lot of Diodes Incorporated DCX53-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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