DMC1030UFDBQ-7

new-10%

Manufacturer part number:DMC1030UFDBQ-7

Manufacturer:Diodes Incorporated

Description:MOSFET N/P-CH 12V 5.1A UDFN2020

Case Package:SOT-23

Datasheet:DMC1030UFDBQ-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	1.36W
Terminal Position	DUAL
Terminal Form	NO LEAD
JESD-30 Code	S-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	1.36W
FET Type	N and P-Channel Complementary
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1003pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	23.1nC @ 10V
Drain to Source Voltage (Vdss)	12V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	5.1A
Drain-source On Resistance-Max	0.034Ohm
DS Breakdown Voltage-Min	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant