DMG1012UW-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
DMG1012UW-7 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
290mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
290mW
Turn On Delay Time
5.1 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C
1A Ta
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Rise Time
7.4ns
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±6V
Fall Time (Typ)
12.3 ns
Turn-Off Delay Time
26.7 ns
Continuous Drain Current (ID)
1A
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
1A
Drain-source On Resistance-Max
0.45Ohm
Drain to Source Breakdown Voltage
20V
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DMG1012UW-7 Product Details
DMG1012UW-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 60.67pF @ 16V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.There is no drain current on this device since the maximum continuous current it can conduct is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.1 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 6V.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
DMG1012UW-7 Features
a continuous drain current (ID) of 1A a drain-to-source breakdown voltage of 20V voltage the turn-off delay time is 26.7 ns
DMG1012UW-7 Applications
There are a lot of Diodes Incorporated DMG1012UW-7 applications of single MOSFETs transistors.