IRLML9303TRPBF

new-10%

Manufacturer part number:IRLML9303TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 30V 2.3A SOT-23-3

Case Package:SOT-23

Datasheet:IRLML9303TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	165MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	7.5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id	2.4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Rise Time	14ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.6 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	-2.3A
Threshold Voltage	-1.3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	12A
Recovery Time	18 ns
Nominal Vgs	-1.3 V
Height	1.016mm
Length	3.0226mm
Width	1.397mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free