IPA60R165CPXKSA1

new-10%

Manufacturer part number:IPA60R165CPXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 21A TO220-3

Case Package:SOT-23

Datasheet:IPA60R165CPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	34W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	34W
Case Connection	ISOLATED
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 100V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	21A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	522 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free