DMG3413L-7

new-10%

Manufacturer part number:DMG3413L-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 20V 3A SOT23

Case Package:SOT-23

Datasheet:DMG3413L-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700mW Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	9.7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	95m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	857pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V
Rise Time	17.7ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	64.2 ns
Turn-Off Delay Time	268.8 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	2.5A
Drain-source On Resistance-Max	0.095Ohm
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free