DMG4466SSSL-13

new-10%

Manufacturer part number:DMG4466SSSL-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 10A 8SO

Case Package:SOT-23

Datasheet:DMG4466SSSL-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.42W Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	478.9pF @ 15V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	7.9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.1 ns
Turn-Off Delay Time	14.6 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.023Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant