DMG4N65CT

new-10%

Manufacturer part number:DMG4N65CT

Manufacturer:Diodes Incorporated

Description:MOSFET N CH 650V 4A TO220-3

Case Package:SOT-23

Datasheet:DMG4N65CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.19W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	15.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	13.5nC @ 10V
Rise Time	13.8ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	3Ohm
Pulsed Drain Current-Max (IDM)	6A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	456 mJ
Height	16.5mm
Length	10.7mm
Width	4.85mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant