DMG6601LVT-7

new-10%

DMG6601LVT-7

Manufacturer part number:DMG6601LVT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N/P-CH 30V 26TSOT

Case Package:SOT-23

Datasheet:DMG6601LVT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	26
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	850mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	DMG6601
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	850mW
Turn On Delay Time	1.7 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	422pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.8A 2.5A
Gate Charge (Qg) (Max) @ Vgs	12.3nC @ 10V
Rise Time	4.6ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	2.2 ns
Turn-Off Delay Time	18.3 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3.8A
Drain-source On Resistance-Max	0.055Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1mm
Length	2.9mm
Width	1.6mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
3,000	$0.09810	$0.2943
6,000	$0.09315	$0.5589
15,000	$0.08573	$1.28595
30,000	$0.08078	$2.4234
75,000	$0.07335	$5.50125
150,000	$0.07200	$10.8