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DMG8822UTS-13

DMG8822UTS-13

DMG8822UTS-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.9A 8TSSOP

SOT-23

DMG8822UTS-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 870mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.8 ns
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 841pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.9A Ta
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V
Rise Time 21.1ns
Fall Time (Typ) 10.1 ns
Turn-Off Delay Time 38.6 ns
Continuous Drain Current (ID) 4.9A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.153079 $0.153079
10 $0.144414 $1.44414
100 $0.136240 $13.624
500 $0.128528 $64.264
1000 $0.121253 $121.253

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