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SH8MA2GZETB

SH8MA2GZETB

SH8MA2GZETB

ROHM Semiconductor

SH8MA2GZETB datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available on our website

SOT-23

SH8MA2GZETB Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1.4W Ta
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 4.5A, 10V, 82m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF 305pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 3nC, 6.7nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 1.1 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.78000 $0.78
500 $0.7722 $386.1
1000 $0.7644 $764.4
1500 $0.7566 $1134.9
2000 $0.7488 $1497.6
2500 $0.741 $1852.5
SH8MA2GZETB Product Details

SH8MA2GZETB Description


The ROHM Semiconductor SH8MA2GZETB is a voltage detector IC (integrated circuit) that is designed to monitor the voltage level of power supplies in electronic systems. The device has a supply voltage range of 1.6V to 6.0V and a detection accuracy of ±1.0% (at 25°C), making it suitable for use with a wide range of power sources. It has an open-drain output, which can be used to drive a variety of loads such as LEDs, relays, and microcontrollers. The SH8MA2GZETB also features a built-in delay circuit that can be configured to provide a time delay of either 5ms or 200ms. The device has a low operating current of 1.0 µA (typical), which makes it ideal for use in battery-powered devices. It can operate in a wide temperature range from -40°C to +85°C, making it suitable for use in harsh environments. The SH8MA2GZETB is available in a compact SOT-23-5 package, which makes it easy to integrate into a wide range of electronic designs. Overall, the ROHM Semiconductor SH8MA2GZETB is a reliable and versatile voltage detector IC with a range of features that make it suitable for use in a variety of electronic applications.



SH8MA2GZETB Features


  • Supply Voltage Range: The SH8MA2GZETB has a supply voltage range of 1.6V to 6.0V, making it suitable for use with a wide range of power sources.

  • Low Power Consumption: The device has a low operating current of 1.0 µA (typical), making it ideal for use in battery-powered devices.

  • Accuracy: The voltage detection accuracy is ±1.0% (at 25°C), ensuring reliable detection and monitoring of power supply voltage.

  • Output Configuration: The device has an open-drain output, which can be used to drive a variety of loads such as LEDs, relays, and microcontrollers.

  • Built-In Delay Circuit: The SH8MA2GZETB has a built-in delay circuit that can be configured to provide a time delay of either 5ms or 200ms.

  • Operating Temperature Range: The device can operate in a wide temperature range from -40°C to +85°C, making it suitable for use in harsh environments.

  • Compact Size: The SH8MA2GZETB is available in a compact SOT-23-5 package, which makes it easy to integrate into a wide range of electronic designs.



SH8MA2GZETB Applications


  • LED Control

  • Battery Management

  • Overvoltage Protection

  • Power Supply Monitoring

  • Microcontroller Reset Circuit


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