SH8MA2GZETB datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available on our website
SOT-23
SH8MA2GZETB Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power - Max
1.4W Ta
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 4.5A, 10V, 82m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
125pF 305pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4.5A Ta
Gate Charge (Qg) (Max) @ Vgs
3nC, 6.7nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max
0.08Ohm
Pulsed Drain Current-Max (IDM)
12A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
1.1 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.78000
$0.78
500
$0.7722
$386.1
1000
$0.7644
$764.4
1500
$0.7566
$1134.9
2000
$0.7488
$1497.6
2500
$0.741
$1852.5
SH8MA2GZETB Product Details
SH8MA2GZETB Description
The ROHM Semiconductor SH8MA2GZETB is a voltage detector IC (integrated circuit) that is designed to monitor the voltage level of power supplies in electronic systems. The device has a supply voltage range of 1.6V to 6.0V and a detection accuracy of ±1.0% (at 25°C), making it suitable for use with a wide range of power sources. It has an open-drain output, which can be used to drive a variety of loads such as LEDs, relays, and microcontrollers. The SH8MA2GZETB also features a built-in delay circuit that can be configured to provide a time delay of either 5ms or 200ms. The device has a low operating current of 1.0 µA (typical), which makes it ideal for use in battery-powered devices. It can operate in a wide temperature range from -40°C to +85°C, making it suitable for use in harsh environments. The SH8MA2GZETB is available in a compact SOT-23-5 package, which makes it easy to integrate into a wide range of electronic designs. Overall, the ROHM Semiconductor SH8MA2GZETB is a reliable and versatile voltage detector IC with a range of features that make it suitable for use in a variety of electronic applications.
SH8MA2GZETB Features
Supply Voltage Range: The SH8MA2GZETB has a supply voltage range of 1.6V to 6.0V, making it suitable for use with a wide range of power sources.
Low Power Consumption: The device has a low operating current of 1.0 µA (typical), making it ideal for use in battery-powered devices.
Accuracy: The voltage detection accuracy is ±1.0% (at 25°C), ensuring reliable detection and monitoring of power supply voltage.
Output Configuration: The device has an open-drain output, which can be used to drive a variety of loads such as LEDs, relays, and microcontrollers.
Built-In Delay Circuit: The SH8MA2GZETB has a built-in delay circuit that can be configured to provide a time delay of either 5ms or 200ms.
Operating Temperature Range: The device can operate in a wide temperature range from -40°C to +85°C, making it suitable for use in harsh environments.
Compact Size: The SH8MA2GZETB is available in a compact SOT-23-5 package, which makes it easy to integrate into a wide range of electronic designs.