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DMJ70H900HJ3

DMJ70H900HJ3

DMJ70H900HJ3

Diodes Incorporated

MOSFET BVDSS: 651V 800V TO251

SOT-23

DMJ70H900HJ3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mounting Type Through Hole
Package / Case TO-251-3, IPak, Short Leads
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 68W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 603pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 18.4nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
75 $1.44760 $108.57

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