STP11NM80

new-10%

Manufacturer part number:STP11NM80

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 400m Ω @ 5.5A, 10V ±30V 1630pF @ 25V 43.6nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP11NM80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	400mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Base Part Number	STP11N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	43.6nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	44A
Avalanche Energy Rating (Eas)	400 mJ
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free