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IRFP21N60LPBF

IRFP21N60LPBF

IRFP21N60LPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 320mOhm @ 13A, 10V ±30V 4000pF @ 25V 150nC @ 10V 600V TO-247-3

SOT-23

IRFP21N60LPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Power Dissipation 330W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 320mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 58ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 4nF
Drain to Source Resistance 320mOhm
Rds On Max 320 mΩ
Nominal Vgs 5 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.119188 $6.119188
10 $5.772818 $57.72818
100 $5.446055 $544.6055
500 $5.137788 $2568.894
1000 $4.846970 $4846.97
IRFP21N60LPBF Product Details

IRFP21N60LPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 320mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFP21N60LPBF Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 320mOhm
a threshold voltage of 5V
a 600V drain to source voltage (Vdss)


IRFP21N60LPBF Applications


There are a lot of Vishay Siliconix
IRFP21N60LPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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