DMN10H220L-7

new-10%

Manufacturer part number:DMN10H220L-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 100V 1.6A SOT-23

Case Package:SOT-23

Datasheet:DMN10H220L-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	DMN10H220
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	6.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	401pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Ta
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	8.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	7.9 ns
Continuous Drain Current (ID)	1.4A
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.22Ohm
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
RoHS Status	ROHS3 Compliant