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DMN1250UFEL-7

DMN1250UFEL-7

DMN1250UFEL-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-QFN1515-1

SOT-23

DMN1250UFEL-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 12-UFQFN Exposed Pad
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 660mW
Terminal Position QUAD
Terminal Form NO LEAD
JESD-30 Code S-PQCC-N12
Number of Elements 8
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power - Max 660mW
FET Type 8 N-Channel, Common Gate, Common Source
Rds On (Max) @ Id, Vgs 450m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 2A
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.45Ohm
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 13 pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.440120 $2.44012
10 $2.302000 $23.02
100 $2.171698 $217.1698
500 $2.048772 $1024.386
1000 $1.932804 $1932.804

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