SIZ902DT-T1-GE3

new-10%

Manufacturer part number:SIZ902DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V

Case Package:SOT-23

Datasheet:SIZ902DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	66W
Base Part Number	SIZ902
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	29W 66W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	16 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	6mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant