SQJ974EP-T1_GE3

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Manufacturer part number:SQJ974EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:SQJ974EP-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SQJ974EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	48W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drain to Source Voltage (Vdss)	100V
FET Feature	Standard
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.55104	$1.65312
6,000	$0.52517	$3.15102
15,000	$0.50669	$7.60035

SQJ974EP-T1_GE3 Description

The SQJ974EP-T1_GE3 is an Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET. The metal-oxide-semiconductor field-effect transistor is referred to as MOSFET. It has a MOS construction and is a field-effect transistor. The MOSFET typically has three terminals: the gate (G), drain (D), and source (S).

SQJ974EP-T1_GE3 Features

100 % Rg and UIS tested
TrenchFET® power MOSFET
AEC-Q101 qualified
High current: The same tendency as for low ON resistance.
High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).
Withstand voltage: The optimum structure is selected for the target withstand voltage.
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.