DMN2004K-7

new-10%

DMN2004K-7

Manufacturer part number:DMN2004K-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 0.63A SOT23-3

Case Package:SOT-23

Datasheet:DMN2004K-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	550mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	5.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 16V
Current - Continuous Drain (Id) @ 25°C	630mA Ta
Rise Time	8.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	37.6 ns
Turn-Off Delay Time	59.4 ns
Continuous Drain Current (ID)	540mA
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.54A
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.6 V
Feedback Cap-Max (Crss)	20 pF
Height	1.1mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free