DMN2011UFDE-13

new-10%

Manufacturer part number:DMN2011UFDE-13

Manufacturer:Diodes Incorporated

Description:MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W

Case Package:SOT-23

Datasheet:DMN2011UFDE-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	610mW Ta
Element Configuration	Single
Turn On Delay Time	3.6 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.5m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3372pF @ 10V
Current - Continuous Drain (Id) @ 25°C	11.7A Ta
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Rise Time	2.6ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	13.5 ns
Turn-Off Delay Time	21.6 ns
Continuous Drain Current (ID)	11.7A
Gate to Source Voltage (Vgs)	12V
RoHS Status	ROHS3 Compliant