FQP630 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP630 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
78W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.34000
$0.34
500
$0.3366
$168.3
1000
$0.3332
$333.2
1500
$0.3298
$494.7
2000
$0.3264
$652.8
2500
$0.323
$807.5
FQP630 Product Details
FQP630 Description
FQP630 is a type of QFET? N-channel enhancement-mode MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. Based on this technology, it is able to provide low on-state resistance, fast switching speed, and withstand high energy pulse in the avalanche and commutation mode. As a result, FQP630 is capable of providing considerable benefits for motor control, high-efficiency switching DC/DC converters, DC-AC converters for uninterrupted power supply, and switch-mode power supply.