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SCT3120ALGC11

SCT3120ALGC11

SCT3120ALGC11

ROHM Semiconductor

MOSFET NCH 650V 21A TO247N

SOT-23

SCT3120ALGC11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature 175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 103W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 103W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 156m Ω @ 6.7A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 21A
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 52A
Max Junction Temperature (Tj) 175°C
Height 25.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $42.541994 $42.541994
10 $40.133956 $401.33956
100 $37.862223 $3786.2223
500 $35.719079 $17859.5395
1000 $33.697243 $33697.243

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