DMN2016UTS-13

new-10%

Manufacturer part number:DMN2016UTS-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 8.58A 8-TSSOP

Case Package:SOT-23

Datasheet:DMN2016UTS-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Weight	157.991892mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	14.5mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	880mW
Terminal Form	GULL WING
Base Part Number	DMN2016U
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	880mW
Turn On Delay Time	10.39 ns
FET Type	2 N-Channel (Dual) Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.5m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1495pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	16.5nC @ 4.5V
Rise Time	11.66ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	16.27 ns
Turn-Off Delay Time	59.38 ns
Continuous Drain Current (ID)	8.58A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.025mm
Length	4.5mm
Width	3.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free