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FDMS7608S

  • FDMS7608S
  • FDMS7608S

FDMS7608S

FDMS7608S

ON Semiconductor

FDMS7608S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMS7608S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 226mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 10MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
JESD-30 Code R-PDSO-N6
Output Voltage 30V
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Output Current 22A
Case Connection DRAIN SOURCE
Turn On Delay Time 7 ns
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 15A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 10ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 30A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Drivers 2
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 65 pF
Height 725μm
Length 5mm
Width 6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.362725 $0.362725
10 $0.342193 $3.42193
100 $0.322823 $32.2823
500 $0.304550 $152.275
1000 $0.287311 $287.311
FDMS7608S Product Details

FDMS7608S Description


In a twin MLP package, this device contains two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDMS7608S Features


  • At VGS = 10 V and lD = 12 A, the maximum r??s(on) is md.

  • Maximum ros(on) = 13.6 mQ at 4.5 V, lD = 10 A Q2: N-Channel

  • Maximum r??g(on) is 6.3 mil at 10 V and 15 A for Vgs.

  • Maximum rDS(on) is 7.2 mQ at 4.5 V and 13 A.

  • REACH Compliant



FDMS7608S Applications


  • Computing

  • Communications

  • Point of Load for General Purpose

  • VCORE Notebook


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