DMN2050LFDB-7

new-10%

Manufacturer part number:DMN2050LFDB-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 3.3A 6UDFN

Case Package:SOT-23

Datasheet:DMN2050LFDB-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e4
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Max Power Dissipation	730mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
JESD-30 Code	S-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	389pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	4.5A
Drain-source On Resistance-Max	0.045Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant