FDMS3622S

new-10%

Manufacturer part number:FDMS3622S

Manufacturer:ON Semiconductor

Description:MOSFET PowerStage 25V Dual N-Channel MOSFET

Case Package:SOT-23

Datasheet:FDMS3622S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	171mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	1W
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN SOURCE
Turn On Delay Time	7 ns
FET Type	2 N-Channel (Dual) Asymmetrical
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 13V
Current - Continuous Drain (Id) @ 25°C	17.5A 34A
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	17.5A
Drain-source On Resistance-Max	0.005Ohm
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.05mm
Length	5.1mm
Width	6.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant