DMN2065UWQ-7

new-10%

Manufacturer part number:DMN2065UWQ-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 3.1A SOT323

Case Package:SOT-23

Datasheet:DMN2065UWQ-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	56m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.1A Ta
Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±12V
Drain Current-Max (Abs) (ID)	2.8A
Drain-source On Resistance-Max	0.065Ohm
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant