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IRF7458TRPBF

IRF7458TRPBF

IRF7458TRPBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m Ω @ 14A, 16V ±30V 2410pF @ 15V 59nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SOT-23

IRF7458TRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 8MOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 14A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 14A, 16V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 4.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V 16V
Vgs (Max) ±30V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 77 ns
Nominal Vgs 4 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.75688 $3.02752
8,000 $0.72319 $5.78552
12,000 $0.69913 $8.38956
IRF7458TRPBF Product Details

IRF7458TRPBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2410pF @ 15V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 22 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V 16V).

IRF7458TRPBF Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns


IRF7458TRPBF Applications


There are a lot of Infineon Technologies
IRF7458TRPBF applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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