IMW120R220M1HXKSA1

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Manufacturer part number:IMW120R220M1HXKSA1

Manufacturer:Infineon Technologies

Description:SiCFET (Silicon Carbide) N-Channel 286m Ω @ 4A, 18V +23V, -7V 289pF @ 800V 8.5nC @ 18V 1.2kV TO-247-3

Case Package:SOT-23

Datasheet:IMW120R220M1HXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Series	CoolSiC™
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Technology	SiCFET (Silicon Carbide)
Power Dissipation-Max	75W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	286m Ω @ 4A, 18V
Vgs(th) (Max) @ Id	5.7V @ 1.6mA
Input Capacitance (Ciss) (Max) @ Vds	289pF @ 800V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 18V
Drain to Source Voltage (Vdss)	1.2kV
Drive Voltage (Max Rds On,Min Rds On)	15V 18V
Vgs (Max)	+23V, -7V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$10.45000	$10.45
500	$10.3455	$5172.75
1000	$10.241	$10241
1500	$10.1365	$15204.75
2000	$10.032	$20064
2500	$9.9275	$24818.75

IMW120R220M1HXKSA1 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 289pF @ 800V.In order to operate this transistor, a voltage of 1.2kV is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (15V 18V).