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DMN2075UDW-7

DMN2075UDW-7

DMN2075UDW-7

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 48m Ω @ 3A, 4.5V ±8V 594.3pF @ 10V 7nC @ 4.5V 6-TSSOP, SC-88, SOT-363

SOT-23

DMN2075UDW-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 40 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 594.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Rise Time 9.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 28.1 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.048Ohm
Drain to Source Breakdown Voltage 20V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.366411 $1.366411
10 $1.289067 $12.89067
100 $1.216101 $121.6101
500 $1.147265 $573.6325
1000 $1.082325 $1082.325
DMN2075UDW-7 Product Details

DMN2075UDW-7 Overview


A device's maximum input capacitance is 594.3pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 28.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.

DMN2075UDW-7 Features


a continuous drain current (ID) of 2.8A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 28.1 ns


DMN2075UDW-7 Applications


There are a lot of Diodes Incorporated
DMN2075UDW-7 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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