FDN372S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN372S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Series
PowerTrench®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
40MOhm
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
2.6A
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Power Dissipation
500mW
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
40m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
630pF @ 15V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
8.1nC @ 5V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
2.6A
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Nominal Vgs
1.4 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.15000
$0.15
500
$0.1485
$74.25
1000
$0.147
$147
1500
$0.1455
$218.25
2000
$0.144
$288
2500
$0.1425
$356.25
FDN372S Product Details
FDN372S Description
FDN372S is 30V N-Channel PowerTrench? SyncFET?. The onsemi FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET FDN372S is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor's monolithic SyncFET process, making it ideal as the low-side switch in a synchronous converter.
FDN372S Features
21 A, 30 V. RDS(ON) = 3.9 m? @ VGS = 10 V
RDS(ON) = 5.1 m? @ VGS = 4.5 V
Low gate charge
Fast switching speed
High-performance trench technology for extremely low RDS(ON)