IXKN75N60C

new-10%

Manufacturer part number:IXKN75N60C

Manufacturer:IXYS

Description:MOSFET N-CH 600V 75A SOT-227B

Case Package:SOT-23

Datasheet:IXKN75N60C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Resistance	36MOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	560W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	560W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.9V @ 5mA
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	500nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	250A
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free